PARA-TYPE GE FAR-INFRARED LASER OSCILLATION IN VOIGT CONFIGURATION

被引：9

作者：

HOSAKO, I

KOMIYAMA, S

机构：

[1] Dept. of Pure and Appl. Sci., Tokyo Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

D O I：

10.1088/0268-1242/7/3B/169

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Far-infrared laser oscillation in p-Ge subjected to crossed electric and magnetic field. Compared with the oscillation in Faraday configuration, the region of radiation in the optical resonator is propagated perpendicularly to the external magnetic field. Compared to the oscillation in Faraday configuration, the region of the electric (E) and magnetic (B) fields for oscillation is expanded significantly. Also, longer-wavelength oscillation (lambda > 150-mu-m), which is missing in Faraday configuration, coexists with shorter-wavelength oscillation (lambda < 120-mu-m) in the whole region of E and B fields. The laser emission is suggested to be of linear polarization, where the plane polarization is aligned either parallel or normal to the external B-field, depending on E- and B-fields and the oscillation wavelength.

引用

页码：B645 / B648

页数：4

共 14 条

[1]

ANDRONOV AA, 1984, JETP LETT, V25, P804

[2]

Ivanov Yu. L., 1983, Soviet Technical Physics Letters, V9, P264

[3] REMARKABLE EFFECTS OF UNIAXIAL-STRESS ON THE FAR-INFRARED LASER-EMISSION IN P-TYPE GE [J].