ANALYSIS OF THE RECOMBINATION VELOCITY AND OF THE ELECTRON-BEAM INDUCED CURRENT AND CATHODOLUMINESCENCE CONTRASTS AT A DISLOCATION

A self-consistent calculation of the barrier height and of the effective recombination velocity at a dislocation has been performed. The procedure has taken account of the bending of the minority carrier quasi-Fermi level across the dislocation space-charge region and in the quasineutral region and of the nonrigid displacement of the dislocation energy levels. The dislocation energy states are considered to be uniformly distributed in a half-filled band. The continuity equation around the dislocation has been solved for the case of a low-level electron beam injection and the electron beam induced current and cathodoluminescence contrasts at the dislocation have been derived.