SR2ALTAO6 FILMS FOR MULTILAYER HIGH-TEMPERATURE SUPERCONDUCTING DEVICE APPLICATIONS

被引:24
作者
FINDIKOGLU, AT
DOUGHTY, C
BHATTACHARYA, S
XI, XX
VENKATESAN, T
LI, Q
FAHEY, RE
STRAUSS, AJ
PHILLIPS, JM
机构
[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.108408
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin films of Sr2AlTaO6 (SAT) and multilayers of YBa2Cu3O7 (YBCO)/SAT have been grown by pulsed laser deposition on [001] LaAlO3 substrates. X-ray diffraction shows that SAT grows on [001] LaAlO3 with the c-axis oriented normal to the substrate plane. X-ray rocking curve and Rutherford backscattering channeling measurements on SAT films yield full width at half maximum of < 0.3-degrees and minimum backscattering yield chi(min) of 5%-7%, respectively, indicating good crystallinity. The real part of the dielectric constant epsilon(r), is found to be approximately 23-30, with approximately 6 X 10(7) V/m static breakdown electric field. Both the dielectric constant and the static breakdown field show negligible temperature dependence between 10 and 300 K. A 100 nm X 10 mum X 50 mum YBCO film on SAT shows zero-field critical current density of approximately 1.3 X 10(6) A/CM2 at 77 K, with a superconducting transition temperature T(c0) of approximately 89.2 K.
引用
收藏
页码:1718 / 1720
页数:3
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