MATRIX CONTROLLED EQUILIBRIUM BETWEEN THE VARIOUS H-SITES IN ANNEALED SPUTTERED A-SI-H

被引：15

作者：

DENEUVILLE, A ^{[1
]}

BRUYERE, JC ^{[1
]}

MINI, A ^{[1
]}

KAHIL, H ^{[1
]}

DANIELOU, R ^{[1
]}

LIGEON, E ^{[1
]}

机构：

[1] CEN,DEPT RECH FONDAMENTALE,F-38041 GRENOBLE,FRANCE

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 16期

关键词：

D O I：

10.1088/0022-3719/14/16/009

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2279 / 2296

页数：18

共 37 条

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[5] BRUYERE JC, 1980, J APPL PHYS, V51, P2199, DOI 10.1063/1.327895
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[7] BRUYERE JC, 1979, CR ACAD SCI B PHYS, V289, P285
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[9] SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON
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[J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 81 - 83
[10] HYDROGEN AND MATRIX EFFECT ON THE OPTICAL GAP OF SPUTTERED A-SI-H
DENEUVILLE, A
BRUYERE, JC
MINI, A
KAHIL, H
DANIELOU, R
LIGEON, E
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 469 - 473