STRAIN-INDUCED ORDERING IN SILICON-GERMANIUM ALLOYS

[1] LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (10) : 3021 - &

[2] THERMODYNAMIC AND OPTICAL PROPERTIES OF GERMANIUM SILICON DIAMOND AND GALLIUM ARSENIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 88 (560P): : 463 - +

[3] HANSEN M, 1958, CONSTITUTION BINARY, P74

[4] STABILITY OF SEMICONDUCTOR STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 56 - 58

[5] HULL R, 1985, B AM PHYS SOC, V30, P265

[6] HULL R, UNPUB

[7] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J]. PHYSICAL REVIEW, 1966, 145 (02): : 637 - &

[8] KITTEL C, 1971, INTRO SOLID STATE PH, P584

[9] ELEASTIC PROPERTIES OF ZNS STRUCTURE SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10): : 4005 - +

[10] STABILITY OF ORDERED BULK AND EPITAXIAL SEMICONDUCTOR ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (13) : 1400 - 1403

[1] LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (10) : 3021 - &

[2] THERMODYNAMIC AND OPTICAL PROPERTIES OF GERMANIUM SILICON DIAMOND AND GALLIUM ARSENIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 88 (560P): : 463 - +

[3] HANSEN M, 1958, CONSTITUTION BINARY, P74

[4] STABILITY OF SEMICONDUCTOR STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 56 - 58

[5] HULL R, 1985, B AM PHYS SOC, V30, P265

[6] HULL R, UNPUB

[7] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J]. PHYSICAL REVIEW, 1966, 145 (02): : 637 - &

[8] KITTEL C, 1971, INTRO SOLID STATE PH, P584

[9] ELEASTIC PROPERTIES OF ZNS STRUCTURE SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10): : 4005 - +

[10] STABILITY OF ORDERED BULK AND EPITAXIAL SEMICONDUCTOR ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (13) : 1400 - 1403