Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 angstrom

被引：200

作者：

Wu, YH ^{[1
]}

Yang, MY

Chin, A

Chen, WJ

Kwei, CM

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Yun Lin Polytech Inst, Dept Mech Mat Engn, Huwei, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 07期

关键词：

high K dielectric; leakage current; reliability;

D O I：

10.1109/55.847374

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical and reliability properties of ultrathin La2O3 gate dielectric have been investigated. The measured capacitance of 33 Angstrom La2O3 gate dielectric is 7.2 mu F/cm(2) that gives an effective K value of 27 and an equivalent oxide thickness of 4.8 Angstrom. Good dielectric integrity is evidence from the low leakage current density of 0.06 A/cm(2) at -1 V, high effective breakdown field of 13.5 MV/cm, low interface-trap density of 3 x 10(10) eV-1/cm(2), and excellent reliability with more than 10 years lifetime even at 2 V bias. In addition to high K, these dielectric properties are very close to conventional thermal SiO2.

引用

页码：341 / 343

页数：3

共 16 条

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