DEFECT STRUCTURE OF UNINTENTIONALLY DOPED ALPHA-AL2O3 CRYSTALS

被引：30

作者：

MOHAPATRA, SK ^{[1
]}

TIKU, SK ^{[1
]}

KROGER, FA ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1979年 / 62卷 / 1-2期

关键词：

D O I：

10.1111/j.1151-2916.1979.tb18804.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Electrical conductivity and the ionic and electronic transference numbers were determined for two types of unintentionally doped single crystalline sapphire for current directions perpendicular to the r plane (1102). One was acceptor dominated and the other was initially donor (Hix) dominated, changing to acceptor domination after a prolonged anneal at 1600°C. The positions of the electronic energy levels of dominant impurities and the constants regulating the oxidation‐reduction of these impurities and of pure Al2O3 are determined. The latter shows a discrepancy with an expression reported previously. Copyright © 1979, Wiley Blackwell. All rights reserved

引用

页码：50 / 57

页数：8

共 22 条

[1]

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[2]

ADLER D, 1975, TREATISE SOLID STATE, V2, P237

[3]

BLUM JB, 1977, AM CERAM SOC BULL, V56, P303

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