ROOM-TEMPERATURE OPERATION OF GAINAS-GAINASP-INP SCH MULTIQUANTUM-FILM LASER WITH NARROW WIRE-LIKE ACTIVE REGION

被引：7

作者：

MIYAKE, Y ^{[1
]}

HIRAYAMA, H ^{[1
]}

ARAI, S ^{[1
]}

MIYAMOTO, Y ^{[1
]}

SUEMATSU, Y ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT ELECT & ELECTR ENGN,TOKYO 152,JAPAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 03期

关键词：

D O I：

10.1109/68.79749

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaInAs-GaInAsP-InP SCH multiquantum-film lasers with approximately 100 nm wide wire-like active region, which were fabricated by two-step LP-OMVPE growths and wet chemical etching, operated at room temperature for the first time. An increase in the threshold current density in such lasers was drastically reduced by using a preheating process in hydrogen atmosphere and a thin InP cover layer growth prior to the regrowth of a GaInAsP optical confinement layer.

引用

页码：191 / 192

页数：2

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