MOMBE GROWTH OF HIGH-QUALITY INP AND GALNAS BULK, HETEROJUNCTION AND QUANTUM-WELL LAYERS

被引：8

作者：

MAUREL, P

BOVE, P

GARCIA, JC

RAZEGHI, M

机构：

[1] Lab. Central de Recherches, Thomson CSF, Orsay

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 06期

关键词：

D O I：

10.1088/0268-1242/5/6/034

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-organic molecular beam epitaxy of high-quality InP and GaInAs layers is presented. A T=4 K exciton-dominated photoluminescence, together with T=77 K mobilities exceeding 50000 cm2 V-1 s-1 have been obtained on InP epilayers, with an n-type carrier concentration in the low 1015 cm-3 range. GaxIn1-xAs ternary compounds have been grown on 2" InP wafers with excellent uniformity and reproducibility. Heterostructures such as single heterojunctions and quantum wells have been made with good electrical and optical properties. GaInAs/InP quantum wells as thin as one monolayer with energy shifts as much as 519 meV higher than the bulk have been grown. A two-dimensional electron gas with mu (300 K)=10000 cm2 V-1 s-1 and mu (4 K)=80000 cm2 V-1 s-1 has been measured.

引用

页码：638 / 642

页数：5

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