ANALYSIS OF FACET REFLECTIVITY, MIRROR LOSS, SINGLE-TRANSVERSE MODE CONDITION AND BEAM DIVERGENCE ANGLE AT 1.3-MU-M AND 1.55-MU-M WAVELENGTH OF INGAASP/INP BURIED HETEROSTRUCTURE SEMICONDUCTOR-LASER DIODES

被引：2

作者：

GHAFOURISHIRAZ, H

机构：

[1] The author is from the Department of Electronic and Electrical Engineering, University of Birmingham, Birmingham, B15 2TT

来源：

OPTICS AND LASER TECHNOLOGY | 1990年 / 22卷 / 01期

关键词：

beam divergence; laser diodes; laser parameters; laser properties;

D O I：

10.1016/0030-3992(90)90010-2

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An analytical study has been carried out to investigate the effect of various material and structural parameters on the properties of InGaAsP/InP buried heterostructure semiconductor laser diodes (BH-LDs) emitting at 1.3 μm and 1.55 μm. In particular the influence of the active layer thickness d, the width W and cavity length L are discussed. Also, the effect of the relative refractive index difference δ = (na - nc) na (where na and nc are the active and cladding layer's indices) on (1) the effective refractive index ne, (2) the single-transverse mode condition, (3) the facet reflectivity R0, (4) the mirror loss αmo and (5) the beam divergences both in the direction parallel to, and perpendicular to the junction plane are considered. The analysis which is based on effective index approach has been performed for the fundamental TE0 and TM0 modes. The results can be used to design semiconductor laser diodes and amplifiers for optimum operation. © 1990.

引用

页码：38 / 46

页数：9

共 38 条

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