A THEORETICAL-STUDY OF THE PHOTOLUMINESCENCE ENERGY SHIFTS OF INTERDIFFUSED QUANTUM-WELLS

被引：7

作者：

HARRISON, I

机构：

[1] Dept. of Electr. and Electron. Eng., Nottingham Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 11期

关键词：

D O I：

10.1088/0268-1242/9/11/004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A theoretical study of the expected photoluminescence line shifts for an interdiffused GaAs/AlAs quantum well has been performed. The interdiffusion coefficient used was assumed to vary exponentially with the Al molar fraction. A comparison of the variation of photoluminescence energy shift with time indicates that this temporal variation is relatively insensitive to the molar variation of the diffusion coefficient. Further studies show that the photoluminescence energy shifts of different well widths may be used to investigate the molar dependence of the diffusion coefficient.

引用

页码：2053 / 2055

页数：3

共 8 条

[1] INTERDIFFUSION BETWEEN GAAS AND ALAS [J].