SOI TECHNOLOGY USING BURIED LAYERS OF OXIDIZED POROUS SI

被引：12

作者：

BARLA, K

BOMCHIL, G

HERINO, R

MONROY, A

机构：

[1] CNET, Grenoble, Fr, CNET, Grenoble, Fr

来源：

IEEE CIRCUITS AND DEVICES MAGAZINE | 1987年 / 3卷 / 06期

关键词：

POROUS MATERIALS - Oxidation - SEMICONDUCTOR DEVICES; MOS; -; Junctions;

D O I：

10.1109/MCD.1987.6323174

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A process to form large defect-free silicon-on-insulator structures on 4-in wafers, without warpage, using a layer of oxidized porous silicon in an n/n** plus /n structure is presented. CMOS devices have been fabricated in insulated single-crystal silicon islands. Mobilities comparable to bulk silicon have been measured and low-leakage junctions were realized. The advantages and limitations of the process are discussed.

引用

页码：11 / 15

页数：5