ON CHARGE NEUTRAL ELECTRIC FIELD IN A SEMICONDUCTOR OF HOMOGENEOUS CONDUCTIVITY TYPE

被引：1

作者：

KENNEDY, DP

OBRIEN, RR

机构：

[1] IBM Corp., Eash Fishkill Lab., Hopewell Junction

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 04期

关键词：

D O I：

10.1109/PROC.1969.7037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An assumption of charge neutrality is frequently used to calculate the electric field arising from an impurity atom density gradient in semiconductor material of homogeneous conductivity type. It is shown that this charge neutral assumption represents a zeroth-order approximation, using Picard's algorithm to solve the associated dffferential equations. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：705 / &