ALN CRYSTAL-GROWTH IN ALN0.8 THIN-FILMS INDUCED BY NE-BOMBARDMENT

A study has been made of the effects of Ne-bombardment on the crystallization of AlN in AlN0.8 thin films, depending on fluence and energy. The films deposited on Si (100) and glassy carbon at near room temperature were bombarded with Ne-ions of fluences ranging from 1 x 10(15) to 2 x 10(17) Ne+ ions/cm2 at energies of 75 and 150 keV. XRD measurements of the films were carried out by means of a theta-2-theta method. The composition of the films was evaluated by using RBS of 1.5 MeV He+ beams. The results were as follows: c-axis oriented AlN crystal normal to the surface was preferentially grown after Ne-bombardment. The XRD intensity of AlN (002) in Ne-bombarded films became clearer with higher energies and fluences. The crystallization of AlN is considered to be induced by energy deposition via collisions, and the higher ratio of the amount of energy deposition via electronic collision to that via nuclear collision plays an important role for the crystallinity and the higher fluence enhances it.