GROWTH OF INP IN CHEMICAL BEAM EPITAXY WITH HIGH-PURITY TERTIARYBUTYLPHOSPHINE

InP layers were grown by chemical beam epitaxy (CBE) using high purity thermally precracked tertiarybutylphosphine (TBP) and trimethylindium (TMI) as the source of the group Ill element. For optimized substrate temperature and V/III ratio, InP films of good electrical and optical quality have been obtained; the n-type background carrier concentration is (1-2) x 10(15) cm-3, with a Hall mobility at 77 K being mu-77 = 45,000 cm2 V-1 s-1. Given the low value of the V/III ratio, and according to mass spectroscopy measurements, the phosphorus species giving rise to epitaxy is expected to be the dimer P2. The TBP consumption in CBE is very low when compared to organometallic vapour phase epitaxy (OMVPE), typically below 0.25 g/mu-m of InP layer.