APPLICATION OF A NEW ANALYTICAL TECHNIQUE OF ELECTRON-DISTRIBUTION CALCULATIONS TO THE PROFILE SIMULATION OF A HIGH-SENSITIVITY NEGATIVE ELECTRON-BEAM RESIST

An analytical model for the exposure of electron-beam sensitive resists is developed. A point beam incident on a multilayer substrate at a right angle is considered. The model uses the diffusion approximation to the Boltzmann transport equation as a starting point for a self-consistent calculation. Results are applied in the case of a new high sensitivity epoxy-based resist, and development at patterns are effectively simulated using the analytical method.