THEORETICAL-STUDY OF STRAINED INGAP QUANTUM-WELL LASERS

被引:8
作者
AHN, D
机构
[1] GoldStar Central Research Laboratory, Seocho-Gu, Seoul 137-140
关键词
D O I
10.1063/1.114035
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effects of biaxial compressive and tensile strains on the optical gain and threshold current density of 70 Å strained InGaP-In(AlGa)P quantum-well lasers are studied theoretically. Due to strain effects on the density of states and optical dipole matrix elements, compressive strain produces the largest gain (TE) for carrier density N<5×1018 cm-3 while the TM mode gain of a tensile strained quantum well is the largest when N>5×1018 cm-3. Calculated threshold current densities of compressive- and tensile-strained quantum wells are both lower than unstrained case. For cavity length longer than 500 μm, a quantum well with compressive strain has the lowest threshold current density. In this case, calculated threshold density shows reasonable agreement with the experiment. © 1995 American Institute of Physics.
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页码:628 / 630
页数:3
相关论文
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