SURFACE-TOPOGRAPHY OF EPITAXIAL AU(111) FILMS DEPOSITED ON MOS2

The epitaxial growth and surface topography of continuous Au films deposited on air-cleaved MoS2 substrates in ultrahigh vacuum have been investigated using low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). The Au films deposited at substrate temperatures ranging from 20 to 500 degrees C show an epitaxially oriented Au(111) surface. Topographical STM images of epitaxial Au(111) films indicate that the surface topography of continuous Au films is strongly dependent on the substrate temperature, and that useful large-area flat terraces are obtained at substrate temperatures of similar to 300 degrees C. When the substrate temperature exceeds similar to 400 degrees C, straight steps are predominantly observed in the Au films. Atomically flat terraces can slip giving a straight step which is interpreted as a slip-line.