TENSILE-STRAINED INGAAS/INGAASP QUANTUM-WELL OPTICAL AMPLIFIERS WITH A WIDE SPECTRAL GAIN REGION AT 1.55 MU-M

被引：24

作者：

MILLER, BI ^{[1
]}

KOREN, U ^{[1
]}

NEWKIRK, MA ^{[1
]}

YOUNG, MG ^{[1
]}

JOPSON, RM ^{[1
]}

DEROSIER, RM ^{[1
]}

CHIEN, MD ^{[1
]}

机构：

[1] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 05期

关键词：

D O I：

10.1109/68.215268

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A tensile-strained InGaAsP/InP multiquantum well optical amplifier was made which has greater-than-or-equal-to 92 nm bandwidth at 16 dB gain for 50 mA drive current. The wide gain bandwidth is a result of both n = 1 and n = 2 contributions from the e --> lh transition. These results suggest wide tunability for lasers made from this material.

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页码：520 / 522

页数：3

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