DEEP SUB-mu m LOW-Tc JOSEPHSON TECHNOLOGY: THE OPPORTUNITIES AND THE CHALLENGES

被引:7
作者
Ketchen, M. B. [1 ]
机构
[1] IBM Corp, Div Res, TJ Watson Res Ctr, IBM Res Div, Yorktown Hts, NY 10598 USA
关键词
D O I
10.1109/77.233527
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Through the 1980s and into the 1990s the semiconductor industry has driven the limits of practical device fabrication into the deep sub-pm regime. Duriig that same time period most work in Josephson technology has been at or above the 1-2 mu m level. There now exists the possibility of highly leveraging existing semiconductor technolo y to explore sub-mu m Jose hson technology. Some of the o portunities and chalrenges of such an undertaking will be discussed in the context of SQUIDs and digital applications.
引用
收藏
页码:2586 / 2593
页数:8
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