FIELD-EFFECT MEASUREMENTS ON EPITAXIAL PBTE AND PBSE FILMS

被引：7

作者：

EGERTON, RF

JUHASZ, C

机构：

[1] Materials Section, Electrical Engineering Department, Imperial College

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1969年 / 2卷 / 07期

关键词：

D O I：

10.1088/0022-3727/2/7/304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Field-effect measurements in the frequency range 30 Hz-70 kHz were carried out on {111} films of lead telluride and lead selenide by applying an electric field through the mica substrate. The results indicate two possible models for surface states at the mica interface: (i) acceptor and donor levels near the middle of the energy gap of the semiconductor, each of density 2×10 12 cm-2 and about 0·05 ev apart; (ii) a uniform density of 2×1013 states cm-2ev-1 within ±0·05 ev of mid-gap. The evidence is mainly in favour of the second model. The surface-state time constant was about 100 μs at 300°K and increased rapidly with decreasing temperature. Field-effect mobilities of several hundred cm2v-1s-1 were observed, which suggests that the films could be suitable for thin-film-transistor applications.

引用

页码：975 / &

共 20 条

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