CALCULATION OF DISTRIBUTION FUNCTIONS BY EXPLOITING STABILITY OF STEADY STATE

被引:186
作者
REES, HD
机构
[1] Royal Radar Establishment, Malvern, Worcestershire England
关键词
D O I
10.1016/0022-3697(69)90018-3
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A numerical method is described for calculating distribution functions of free carriers in crystals from a knowledge of the scattering rates and applied fields. The stability of the steady state is exploited to derive an explicit expression for the distribution function without introducing any a priori assumptions about its form. This expression can be evaluated by a convergent iterative process. A rate of scatter leaving the free carrier wave vector unaltered is defined. This scattering process has no physical consequence, but suitable choice of its rate can make the numerical iteration straightforward. The technique is extended to accommodate scattering processes dependent on the distribution function and to analyse time dependent effects. Results are given of numerical calculations of distribution functions for free carriers in electric fields, taking into account scattering processes including polar phonon and impurity scattering. © 1969.
引用
收藏
页码:643 / &
相关论文
共 11 条
[1]   ELECTRIC FIELD DEPENDENCE OF CARRIER TEMPERATURE IN SEMICONDUCTORS [J].
BAYNHAM, AC ;
BUTCHER, PN ;
FAWCETT, W ;
LOVELUCK, JM .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1967, 92 (577P) :783-&
[2]   MONTE CARLO CALCULATION OF VELOCITY-FIELD RELATIONSHIP FOR GALLIUM ARSENIDE [J].
BOARDMAN, AD ;
FAWCETT, W ;
REES, HD .
SOLID STATE COMMUNICATIONS, 1968, 6 (05) :305-&
[3]   PATH VARIABLE FORMULATION OF HOT CARRIER PROBLEM [J].
BUDD, H .
PHYSICAL REVIEW, 1967, 158 (03) :798-&
[4]   INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS [J].
BUTCHER, PN ;
FAWCETT, W .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P) :1205-&
[5]   CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J].
BUTCHER, PN ;
FAWCETT, W .
PHYSICS LETTERS, 1966, 21 (05) :489-&
[6]   THE KINETIC FORMULATION OF CONDUCTION PROBLEMS [J].
CHAMBERS, RG .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1952, 65 (390) :458-459
[7]  
CONWELL EM, 1966, J PHYS SOC JPN, VS 21, P527
[8]  
CONWELL EM, 1966, P INT C PHYS SEMICON
[9]  
KUROSAWA T, 1966, J PHYS SOC JPN, VS 21, P424
[10]  
KUROSAWA T, 1966, P INT C PHYS SEMICON