POWER-FIELD-CONTROLLED THYRISTORS FABRICATED USING SILICON LIQUID-PHASE EPITAXY

被引:2
作者
BALIGA, BJ [1 ]
机构
[1] GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301
关键词
D O I
10.1109/T-ED.1979.19784
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
[No abstract available]
引用
收藏
页码:1858 / 1858
页数:1
相关论文
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[1]   MORPHOLOGY OF SILICON EPITAXIAL LAYERS GROWN BY UNDERCOOLING OF A SATURATED TIN MELT [J].
BALIGA, BJ .
JOURNAL OF CRYSTAL GROWTH, 1977, 41 (02) :199-204
[2]   KINETICS OF EPITAXIAL-GROWTH OF SILICON FROM A TIN MELT [J].
BALIGA, BJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (10) :1627-1631
[3]  
NICHIZAWA JI, 1975, IEEE T ELECTRON DEVI, V23, P185
[4]  
WESSELS BW, 1977, P INT ELECTRON DEVIC, P30