INDIRECT EXCITON DISPERSION IN III-V-SEMICONDUCTORS - CAMELS BACK IN GAP

被引:26
作者
GLINSKII, GF
KOPYLOV, AA
PIKHTIN, AN
机构
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D O I
10.1016/0038-1098(79)90111-X
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:631 / 634
页数:4
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共 21 条
[1]  
AHLBURN, 1968, PHYS REV, V167, P717
[2]   CAMEL BACK EXCITONS IN GAP [J].
ALTARELLI, M ;
SABATINI, RA ;
LIPARI, NO .
SOLID STATE COMMUNICATIONS, 1978, 25 (12) :1101-1104
[3]   EXCITON DISPERSION IN SEMICONDUCTORS WITH DEGENERATE BANDS [J].
ALTARELLI, M ;
LIPARI, NO .
PHYSICAL REVIEW B, 1977, 15 (10) :4898-4906
[4]  
BERNDT V, 1975, PISMA ZH EKSP TEOR F, V22, P578
[5]  
BERNDT V, 1977, FTP, V11, P1782
[6]  
BIMBERG D, 1978, INT C PHYS SEMICOND
[7]   FINE-STRUCTURE OF INDIRECT EXCITON IN GAP [J].
CAPIZZI, M ;
EVANGELISTI, F ;
FIORINI, P ;
FROVA, A ;
PATELLA, F .
SOLID STATE COMMUNICATIONS, 1977, 24 (12) :801-803
[8]   INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE [J].
DEAN, PJ ;
THOMAS, DG .
PHYSICAL REVIEW, 1966, 150 (02) :690-&
[9]  
GLINSKII GF, 1978, FTP, V12, P1327
[10]   EXCITON DISPERSION IN DEGENERATE BANDS [J].
KANE, EO .
PHYSICAL REVIEW B, 1975, 11 (10) :3850-3859