PLASMA-ETCHING OF POLYSILICON AND SI3N4 IN SF6 WITH SOME IMPACT ON MOS DEVICE CHARACTERISTICS

被引：8

作者：

BEINVOGL, W ^{[1
]}

DEPPE, HR ^{[1
]}

STOKAN, R ^{[1
]}

HASLER, B ^{[1
]}

机构：

[1] SIEMENS AG,D-8000 MUNICH 80,FED REP GER

来源：

关键词：

D O I：

10.1109/T-ED.1981.20610

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1332 / 1337

页数：6

共 18 条

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[3]

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[4]

BLASH A, 1980, OCT KOD MICR SEM SAN

[5] CF4 ETCHING IN A DIODE SYSTEM [J].

BONDUR, JA .

[6] SF6, A PREFERABLE ETCHANT FOR PLASMA-ETCHING SILICON [J].

EISELE, KM .

[7]

ENDO N, 1980, IEEE T ELECTRON DEV, V27, P1346, DOI 10.1109/T-ED.1980.20038

[8]

GDULA RA, 1979, FAL ECS M

[9]

Hirata K., 1980, International Electron Devices Meeting. Technical Digest, P405

[10]

KALTER H, 1979, PHILLIPS TECHN RDSCH, V38, P203