LOW-TEMPERATURE POLYSILICON TFTS - A COMPARISON OF SOLID-PHASE AND LASER CRYSTALLIZATION

被引:37
作者
PLAIS, F
LEGAGNEUX, P
REITA, C
HUET, O
PETINOT, F
GODARD, B
STEHLE, M
FOGARASSY, E
机构
[1] THOMSON CSF-LCR, Domaine de Corbeville
[2] SOPRA S.A., 92270 Bois Colombes
[3] Lab. PHASE, 67037 Strasbourg Cedex, BP20
关键词
D O I
10.1016/0167-9317(95)00093-N
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
[No abstract available]
引用
收藏
页码:443 / 446
页数:4
相关论文
共 4 条
[1]  
Wu, Polycrystalline Silicon Thin Film Transistors for Liquid Crystal Displays, Solid State Phenomena, 37-38, (1994)
[2]  
Pribat, Et al., Rev. Tech. Thomson-CSF, 26, (1994)
[3]  
Kretz, Et al., Determination of Crystallisation Parameters of a-Si from In Situ Conductance Measurements and Transmission Electron Microscopy Analysis, Solid State Phenomena, 37-38, (1994)
[4]  
Plais, Et al., Flat panel displays materials, MRS Proceedings, 345, (1994)