GALVANOMAGNETIC THEORY FOR ELECTRONS IN GERMANIUM AND SILICON - MAGNETORESISTANCE IN THE HIGH-FIELD SATURATION LIMIT

被引:25
作者
GOLD, L
ROTH, LM
机构
来源
PHYSICAL REVIEW | 1956年 / 103卷 / 01期
关键词
D O I
10.1103/PhysRev.103.61
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:61 / 66
页数:6
相关论文
共 9 条
[1]   THEORY OF THE GALVANOMAGNETIC EFFECTS IN GERMANIUM [J].
ABELES, B ;
MEIBOOM, S .
PHYSICAL REVIEW, 1954, 95 (01) :31-37
[2]  
DEXTER RN, 1954, PHYS REV, V96, P233
[3]   TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J].
HERRING, C .
BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02) :237-290
[4]  
LAX, 1954, PHYSICA, V20, P818
[5]   THE MAGNETO-RESISTANCE EFFECT IN ORIENTED SINGLE CRYSTALS OF GERMANIUM [J].
PEARSON, GL ;
SUHL, H .
PHYSICAL REVIEW, 1951, 83 (04) :768-776
[6]   MAGNETO-RESISTANCE EFFECT AND THE BAND STRUCTURE OF SINGLE CRYSTAL SILICON [J].
PEARSON, GL ;
HERRING, C .
PHYSICA, 1954, 20 (11) :975-978
[7]   MAGNETORESISTANCE EFFECT IN CUBIC SEMICONDUCTORS WITH SPHEROIDAL ENERGY SURFACES [J].
SHIBUYA, M .
PHYSICAL REVIEW, 1954, 95 (06) :1385-1393
[8]   CYCLOTRON RESONANCES, MAGNETORESISTANCE, AND BRILLOUIN ZONES IN SEMICONDUCTORS [J].
SHOCKLEY, W .
PHYSICAL REVIEW, 1953, 90 (03) :491-491
[9]  
SHOCKLEY W, 1950, ELECTRONS HOLES SEMI, P276