GENERAL EXPRESSION FOR THE ELECTRICALLY DETECTED MAGNETIC-RESONANCE SIGNAL FROM SEMICONDUCTORS

被引：18

作者：

XIONG, Z

MILLER, DJ

机构：

[1] School of Physics, The University of New South Wales, Kensington NSW 2033

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 03期

关键词：

D O I：

10.1063/1.110040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A general expression is obtained for the electrically detected magnetic resonance (EDMR) signal from semiconductors based on the electron-hole pair model. The expression is applicable for all values of the trapping, dissociation, and recombination rates of the levels involved. Measurements of the EDMR signal as a function of microwave power are used to obtain values for the dissociation and recombination rates for a center in a Si diode.

引用

页码：352 / 354

页数：3

共 17 条

[1] OPTICALLY DETECTED MAGNETIC-RESONANCE (ODMR) INVESTIGATIONS OF RECOMBINATION PROCESSES IN SEMICONDUCTORS
CAVENETT, BC
[J]. ADVANCES IN PHYSICS, 1981, 30 (04) : 475 - 538
[2] SPIN DEPENDENT RECOMBINATION IN PT-DOPED SILICON P-N-JUNCTIONS
CHRISTMANN, P
WETZEL, C
MEYER, BK
ASENOV, A
ENDROS, A
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (15) : 1857 - 1859
[3] INFLUENCE OF EXCHANGE INTERACTION ON PARAMAGNETIC RELAXATION TIMES
GOLDSBOROUGH, JP
MANDEL, M
PAKE, GE
[J]. PHYSICAL REVIEW LETTERS, 1960, 4 (01) : 13 - 15
[4] THEORY OF SPIN-DEPENDENT RECOMBINATION IN SEMICONDUCTORS
HABERKORN, R
DIETZ, W
[J]. SOLID STATE COMMUNICATIONS, 1980, 35 (06) : 505 - 508
[5] SPIN-DEPENDENT AND LOCALIZATION EFFECTS AT SI/SIO2 DEVICE INTERFACES
HENDERSON, B
PEPPER, M
VRANCH, RL
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (12) : 1045 - 1060
[6] THE SPIN-DEPENDENT RESONANCE SIGNAL FROM SILICON
KACHWALLA, Z
MILLER, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (07) : 2848 - 2852
[7] KAPLAN D, 1978, J PHYS LETT-PARIS, V39, pL51, DOI 10.1051/jphyslet:0197800390405100
[8] SPIN DEPENDENT SURFACE RECOMBINATION IN SILICON P-N-JUNCTIONS - THE EFFECT OF IRRADIATION
KAPLAN, D
PEPPER, M
[J]. SOLID STATE COMMUNICATIONS, 1980, 34 (10) : 803 - 805
[9] SPIN-DEPENDENT RECOMBINATION ON SILICON SURFACE
LEPINE, DJ
[J]. PHYSICAL REVIEW B, 1972, 6 (02): : 436 - &
[10] ELECTRICALLY DETECTED MAGNETIC-RESONANCE OF A TRANSITION-METAL RELATED RECOMBINATION CENTER IN SI P-N DIODES
RONG, FC
GERARDI, GJ
BUCHWALD, WR
POINDEXTER, EH
UMLOR, MT
KEEBLE, DJ
WARREN, WL
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (05) : 610 - 612

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