IDENTITY BETWEEN SPREADING AND NOISE DIFFUSION-COEFFICIENTS FOR HOT CARRIERS IN SEMICONDUCTORS

被引:14
作者
NOUGIER, JP
机构
关键词
D O I
10.1063/1.89850
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:671 / 673
页数:3
相关论文
共 24 条
[12]   DIFFERENTIAL RELAXATION-TIMES AND DIFFUSIVITIES OF HOT CARRIERS IN ISOTROPIC SEMICONDUCTORS [J].
NOUGIER, JP ;
ROLLAND, M .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) :1683-1687
[13]   MOBILITY, NOISE TEMPERATURE, AND DIFFUSIVITY OF HOT HOLES IN GERMANIUM [J].
NOUGIER, JP ;
ROLLAND, M .
PHYSICAL REVIEW B, 1973, 8 (12) :5728-5737
[14]   NOISE TEMPERATURE AND SPECTRAL DENSITY OF HOT CARRIER VELOCITY FLUCTUATIONS IN SEMICONDUCTORS [J].
NOUGIER, JP .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 55 (01) :K43-K46
[15]  
NOUGIER JP, 1977, P INT C HOT ELECTRON
[16]   HIGH-FIELD DIFFUSIVITY OF ELECTRONS IN SILICON [J].
PERSKY, G ;
BARTELINK, DJ .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4414-+
[17]  
POZHELA YK, 1968, SOV PHYS SEMICOND+, V2, P503
[18]   NOISE THEORY FOR HOT ELECTRONS [J].
PRICE, PJ .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1959, 3 (02) :191-194
[19]  
PRICE PJ, 1965, FLUCTUATION PHENOMEN, P139
[20]   NOISE CALCULATION BY IMPEDANCE FIELD METHOD - APPLICATION TO SINGLE INJECTION [J].
RIGAUD, A ;
NICOLET, MA ;
SAVELLI, M .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 18 (02) :531-543