SIMULATION OF GAAS P-I-N-DIODES

被引：13

作者：

GOPINATH, A ^{[1
]}

ATWATER, H ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 04期

关键词：

Manuscript received August; 24; 1987; revised November 17; 1987. This work was sponsored by the Department of the Army. A. Gopinath was with the MIT Lincoln Laboratory; Lexington; MA 02173. He is now with the Department of Electrical Engineering; University of Minnesota; Minneapolis; MN 55455. H. Atwater was with the MIT Lincoln Laboratory; MA 02173. He is now with the Naval Postgraduate School; Monterey; CA 93940. IEEE Log Number 8718964;

D O I：

10.1109/16.2473

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：414 / 417

页数：4

共 13 条

[1] GLOBAL APPROXIMATE NEWTON METHODS [J].