PROPERTIES OF ION-IMPLANTED BI IN CDS

被引：27

作者：

TELL, B

GIBSON, WM

机构：

[1] Bell Telephone Laboratories, Incorporated, Holmdel

[2] Bell Telephone Laboratories, Incorporated, Murray Hill

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 13期

关键词：

D O I：

10.1063/1.1657390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It has been reported that room-temperature Bi implants with no post-implantation annealing produce high-conductivity p-type layers in ordinarily n-type CdS. We have similarly implanted Bi and also Xe into CdS at the 1015 cm-2 level, and have studied various properties including optical absorption, photoluminescence, and photovoltage. In all cases, similar behavior is observed with both Bi and Xe implants, which indicates that radiation damage effects are dominating any purely chemical effects. © 1970 The American Institute of Physics.

引用

页码：5320 / &

共 13 条

[1] PHOSPHOROUS-ION-IMPLANTED CDS [J].