CONDUCTING PROPERTY OF EPITAXIAL CUO FILM PREPARED BY REACTIVE SPUTTERING

被引：4

作者：

NAKAMURA, T

YAMAMOTO, H

TANAKA, M

机构：

[1] College of Sci. & Technol., Nihon University, Chiba, 274, Narashinodai, Funabashi-shi

来源：

PHYSICA B | 1990年 / 165卷

关键词：

D O I：

10.1016/S0921-4526(09)80330-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The epitaxial CuO film with a preferential growth of (111) planes can be prepared by a reactive sputtering on single-crystal MgO (100) substrates. The conductivity of the epitaxial film showed a semi conductivity with a comparatively small activation energy, about 0.14 eV. The relationship between the quality of the crystal of the film and the conducting property observed in the comparatively low temperature was discussed. © 1990, Elsevier Science Publishers B.V. (North-Holland). All rights reserved.

引用

页码：1489 / 1490

页数：2

共 6 条

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