PHOTOCONDUCTIVITY MEASUREMENT OF THE ELECTRON-MOBILITY IN AN ELECTRON-HOLE PLASMA

被引：7

作者：

BISHOP, PJ

DANIELS, ME

RIDLEY, BK

BASS, SJ

TAYLOR, LL

机构：

[1] Dept. of Phys., Essex Univ., Colchester

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 07期

关键词：

D O I：

10.1088/0268-1242/6/7/012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A study of the transient photoconductive response of semiconductor MQW systems in the nanosecond regime has shown that the initial amplitude increases sublineary with excitation intensity and exhibits saturation. We show that the origin of this behaviour can be understood on the basis of the density dependence of the electron mobility in the presence of the subband structure induced by quantum confinement. Analysis of the experimental results for a GaInAs/InP MQW system along these yields a measurement of electron mobility in an electron-hole plasma and its dependence on plasma density.

引用

页码：631 / 634

页数：4

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