CORRELATION BETWEEN STRUCTURAL AND ELECTRICAL PROFILES IN ION-IMPLANTED GAAS

被引：14

作者：

SADANA, DK ^{[1
]}

BOOKER, GR ^{[1
]}

SEALY, BJ ^{[1
]}

STEPHENS, KG ^{[1
]}

BADAWI, MH ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT MET & MAT SCI,OXFORD,ENGLAND

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 49卷 / 1-3期

关键词：

D O I：

10.1080/00337578008243091

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：183 / 186

页数：4

共 5 条

[1] PETTIT HR, 1971, 10 I PHYS C SER, P290
[2] OBSERVATION OF DISSOCIATED DISLOCATIONS IN SILICON
RAY, ILF
COCKAYNE, DJ
[J]. PHILOSOPHICAL MAGAZINE, 1970, 22 (178): : 853 - &
[3] STRUCTURAL AND ELECTRICAL PROFILES FOR DOUBLE DAMAGE LAYERS IN ION-IMPLANTED SILICON
SADANA, DK
FLETCHER, J
BOOKER, GR
[J]. ELECTRONICS LETTERS, 1977, 13 (21) : 632 - 633
[4] TEM STRUCTURAL STUDIES ON SE+ IMPLANTED GAAS
SADANA, DK
BOOKER, GR
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (1-2): : 35 - 43
[5] van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1