COMPREHENSIVE INVESTIGATION OF POLISH-INDUCED SURFACE STRAIN IN (100) AND (111) GAAS AND INP

被引：30

作者：

HANG, Z ^{[1
]}

SHEN, H ^{[1
]}

POLLAK, FH ^{[1
]}

机构：

[1] CUNY GRAD SCH & UNIV CTR,NEW YORK,NY 10036

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 06期

关键词：

D O I：

10.1063/1.341542

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3233 / 3242

页数：10

共 25 条

[1] RAMAN-SPECTROSCOPY - VERSATILE TOOL FOR CHARACTERIZATION OF THIN-FILMS AND HETEROSTRUCTURES OF GAAS AND ALXGA1-XAS [J].

ABSTREITER, G ;

BAUSER, E ;

FISCHER, A ;

PLOOG, K .

APPLIED PHYSICS, 1978, 16 (04) :345-352

[2]

ANASTASSAKIS EM, 1980, DYNAMICAL PROPERTIES, P158

[3] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1983, 27 (02) :985-1009

[4]

BEILLMANN J, 1983, J PHYS C SOLID STATE, V16, P1135

[5]

Carles R., 1980, Journal of the Physical Society of Japan, V49, P665

[6] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J].

CERDEIRA, F ;

BUCHENAUER, CJ ;

CARDONA, M ;

POLLAK, FH .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :580-+

[7] EFFECT OF SURFACE DAMAGE ON REFLECTANCE OF GERMANIUM IN 2650-10 000-A REGION [J].

DONOVAN, TM ;

BENNETT, HE ;

ASHLEY, EJ .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1963, 53 (12) :1403-&

[8] OBSERVATIONS OF PHONON LINE BROADENING IN III-V SEMICONDUCTORS BY SURFACE REFLECTION RAMAN-SCATTERING [J].

EVANS, DJ ;

USHIODA, S .

PHYSICAL REVIEW B, 1974, 9 (04) :1638-1645

[9]

Hayes W., 1978, SCATTERING LIGHT CRY

[10]

HIRTH JP, 1982, THEORY DISLOCATIONS, P13

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