EFFUSION OF DEUTERIUM FROM DEUTERATED-FLUORINATED AMORPHOUS-SILICON UNDER ILLUMINATION

被引：11

作者：

WEIL, R ^{[1
]}

BUSSO, A ^{[1
]}

BEYER, W ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH, INST SCHICT & IONENTECHN, D-5170 JULICH 1, FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 25期

关键词：

D O I：

10.1063/1.100218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2477 / 2479

页数：3

共 11 条

[1]

BEYER W, 1985, TETRAHEDRALLY BONDED, P129

[2]

BEYER W, 1988, IN PRESS APR P MRS C

[3]

Hamakawa Y., 1982, AMORPHOUS SEMICONDUC

[4]

HAMAKAWA Y, 1983, SOLAR CELLS, V9

[5] THE ABSENCE OF THE STAEBLER-WRONSKI EFFECT IN FLUORINATED AMORPHOUS-SILICON [J].

JANAI, M ;

STUTZMANN, M ;

WEIL, R .

SOLAR CELLS, 1985, 14 (02) :191-192

[6] PROPERTIES OF FLUORINATED GLOW-DISCHARGE AMORPHOUS-SILICON [J].

JANAI, M ;

WEIL, R ;

PRATT, B .

PHYSICAL REVIEW B, 1985, 31 (08) :5311-5321

[7] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SI-F-H ALLOYS [J].

MADAN, A ;

OVSHINSKY, SR ;

BENN, E .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 40 (04) :259-277

[8] DETERMINATION OF THE FLUORINE CONCENTRATION IN SILICON FILMS GROWN FROM THE DISPROPORTIONATION OF SIF2 [J].

MOSER, F ;

JANAI, M ;

WEIL, R ;

PRATT, B ;

KALISH, R ;

LEVIN, K ;

BRENER, R .

THIN SOLID FILMS, 1982, 90 (02) :161-165

[9] FORMATION OF PIN HOLES IN HYDROGENATED AMORPHOUS-SILICON AT HIGH-TEMPERATURES AND THE YIELD STRENGTH OF A-SI-H [J].

SHANKS, HR ;

LEY, L .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :811-813

[10] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].

STAEBLER, DL ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1977, 31 (04) :292-294

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