BUTT-COUPLED INGAAS METAL-SEMICONDUCTOR-METAL WAVE-GUIDE PHOTODETECTOR FORMED BY SELECTIVE AREA REGROWTH

被引：15

作者：

SOOLE, JBD

SCHUMACHER, H

LEBLANC, HP

BHAT, R

KOZA, MA

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 16期

关键词：

D O I：

10.1063/1.103161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the monolithic integration of an InGaAs metal-semiconductor-metal Schottky barrier photodetector with a butt-coupled InP/InGaAsP/InP waveguide, where the latter is formed by selective area regrowth using organometallic chemical vapor deposition. A fast pulse response (60-65 ps full width at half maximum, with no discernible tail) and a high quantum efficiency (∼80%) were observed for 1.3 μm guided light with the detector biased at 7 V. A thin InAlAs Schottky barrier enhancement layer limited the dark current to ∼28 nA at this bias.

引用

页码：1518 / 1520

页数：3

共 10 条

[1]

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[2]

CHAN WK, 1989, IEEE PHOTO TECH LETT, V3, P65

[3] INTEGRATED WAVE-GUIDE P-I-N PHOTODETECTOR BY MOVPE REGROWTH [J].