ELECTRON-HOLE PLASMA PHASE-TRANSITION IN DIRECT AND INDIRECT GAP SEMICONDUCTORS

被引:13
作者
KOCH, SW
HAUG, H
机构
[1] Institut für Theoretische Physik der Universität Frankfurt-Main
关键词
D O I
10.1016/0375-9601(79)90785-0
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We show that the electron-hole droplet nucleation can be a first- or second-order nonequilibrium phase transition, depending on the lifetime of the electronic excitations. The phase transition is known to be of first order for Ge, but for GaAs and CdS it is shown to be of second order. © 1979.
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收藏
页码:250 / 252
页数:3
相关论文
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