INTERACTION OF ELECTRONS WITH INTERFACE PHONONS IN GAAS/ALAS AND GAAS/ALGAAS HETEROSTRUCTURES

被引：8

作者：

LUGLI, P

BORDONE, P

MOLINARI, E

RUCKER, H

DEPAULA, AM

MACIEL, AC

RYAN, JF

SHAYEGAN, M

机构：

[1] UNIV MODENA,DIPARTIMENTO FIS,I-41100 MODENA,ITALY

[2] CNR,IST OM CORBINO,I-00189 ROME,ITALY

[3] UNIV OXFORD,CLARENDON LAB,OXFORD OX1 3PU,ENGLAND

[4] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

D O I：

10.1088/0268-1242/7/3B/027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The interaction of electrons with interface phonons is predicted to be of major importance in narrow quantum wells. Time-integrated Raman measurements of non-equilibrium phonons in GaAs/AlAs structures show strong coupling to AlAs interface modes, in good agreement with theoretical predictions based on a microscopic phonon model. Monte Carlo simulations of time-resolved Raman measurements of interface phonons in GaAs/AlGaAs structures provide further confirmation of this result.

引用

页码：B116 / B119

页数：4

共 15 条

[1] PHONON-SPECTRA OF ULTRATHIN GAAS/ALAS SUPERLATTICES - AN ABINITIO CALCULATION [J].