HIGH-EFFICIENCY SECONDARY-ELECTRON EMISSION FROM SPUTTERED MGO-AU CERMETS

被引：28

作者：

HENRICH, VE ^{[1
]}

FAN, JCC ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1973年 / 23卷 / 01期

关键词：

D O I：

10.1063/1.1654735

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：7 / 8

页数：2

共 12 条

[1]

BRONSHTEYN IM, 1968, RADIO ENG ELECTRON P, V13, P1282

[2]

Hedman J., 1972, PHYS SCRIPTA, V5, P93, DOI [10.1088/0031-8949/5/1-2/015, DOI 10.1088/0031-8949/5/1-2/015]

[3]

HENRICH VE, 1972, 1972 MIT LINC LAB RE, P55

[4]

HENRICH VE, TO BE PUBLISHED

[5] SECONDARY-ELECTRON EMISSION FROM ION-IMPLANTED SILICON [J].

KONRAD, GT .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1996-&

[6]

LESENSKY L, 1969, DA28043AMC01698E CON

[7]

PICKAR KA, 1968, MM6823221 BELL TEL L

[8] GaAs-Cs: A NEW TYPE OF PHOTOEMITTER [J].

Scheer, J. J. ;

van Laar, J. .

SOLID STATE COMMUNICATIONS, 1965, 3 (08) :189-193

[9] NEW HIGH-GAIN DYNODE FOR PHOTOMULTIPLIERS [J].

SIMON, RE ;

SOMMER, AH ;

TIETJEN, JJ ;

WILLIAMS, BF .

APPLIED PHYSICS LETTERS, 1968, 13 (10) :355-+

[10] STABLE DISTRIBUTED-DYNODE ELECTRON MULTIPLIER [J].

SPINDT, CA ;

SHOULDER.KR .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (06) :775-&

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