GENERATION OF POINT-DEFECTS IN GAAS BY ELECTRON-HOLE RECOMBINATION AT DISLOCATIONS

被引：28

作者：

HUTCHINSON, PW ^{[1
]}

DOBSON, PS ^{[1
]}

WAKEFIELD, B ^{[1
]}

OHARA, S ^{[1
]}

机构：

[1] PORD,MARTLESHAM HEATH,SUFFOLK,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 11-1期

关键词：

D O I：

10.1016/0038-1101(78)90217-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1413 / &

共 11 条

[1] TRANSMISSION ELECTRON-MICROSCOPE STUDIES OF POINT-DEFECT CLUSTERS IN FCC AND BCC METALS [J].

EYRE, BL .

JOURNAL OF PHYSICS F-METAL PHYSICS, 1973, 3 (02) :422-&

[2] DEFECT STRUCTURE OF DEGRADED HETEROJUNCTION GAALAS-GAAS LASERS [J].

HUTCHINSON, PW ;

DOBSON, PS ;

OHARA, S ;

NEWMAN, DH .

APPLIED PHYSICS LETTERS, 1975, 26 (05) :250-252

[3] DEFECT STRUCTURE OF DEGRADED GAALAS-GAAS DOUBLE HETEROJUNCTION LASERS [J].

HUTCHINSON, PW ;

DOBSON, PS .

PHILOSOPHICAL MAGAZINE, 1975, 32 (04) :745-754

[4] INTERSTITIAL CONDENSATION IN N+ GAAS [J].

HUTCHINSON, PW ;

DOBSON, PS .

JOURNAL OF MATERIALS SCIENCE, 1975, 10 (09) :1636-1641

[5] NATURE OF DEFECTS IN N+ GALLIUM-ARSENIDE [J].

HUTCHINSON, PW ;

DOBSON, PS .

PHILOSOPHICAL MAGAZINE, 1974, 30 (01) :65-73

[6]

NELSON RS, 1972, 16 I PHYS C SER, P140

[7] ORIGIN OF DISLOCATION CLIMB DURING LASER OPERATION [J].

OHARA, S ;

HUTCHINSON, PW ;

DOBSON, PS .

APPLIED PHYSICS LETTERS, 1977, 30 (08) :368-371

[8] DEFECT STRUCTURE INTRODUCED DURING OPERATION OF HETEROJUNCTION GAAS LASERS [J].

PETROFF, P ;

HARTMAN, RL .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :469-471

[9] RAPID DEGRADATION PHENOMENON IN HETEROJUNCTION GAALAS-GAAS LASERS [J].

PETROFF, P ;

HARTMAN, RL .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3899-3903

[10] DISLOCATION CLIMB MODEL IN COMPOUND SEMICONDUCTORS WITH ZINC BLENDE STRUCTURE [J].

PETROFF, PM ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1976, 29 (08) :461-463

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