SILICON-GATE TECHNOLOGY

被引：56

作者：

VADASZ, LL

GROVE, AS

ROWE, TA

MOORE, GE

机构：

来源：

IEEE SPECTRUM | 1969年 / 6卷 / 10期

关键词：

D O I：

10.1109/MSPEC.1969.5214116

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon-gate technology provides an advantageous approach for implementing large-scale integrated arrays of field-effect transistors. Its advantages principally resulting from the low threshold voltage and the self-aligned gate structure buried under an insulator ease the problem of interfacing these circuits to bipolar integrated circuits and increase both their performance and functional density, making MOS integrated circuits easier and more economical to use. This article reviews recent progress with this technology and shows its application to the construction of complex digital functions as illustrated by a memory circuit. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：28 / &