VOID FORMATION MECHANISM IN VLSI ALUMINUM METALLIZATION

被引：38

作者：

HINODE, K ^{[1
]}

ASANO, I ^{[1
]}

HOMMA, Y ^{[1
]}

机构：

[1] HITACHI LTD,CTR DEVICE DEV,OME,TOKYO 198,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/16.24347

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1050 / 1055

页数：6

共 12 条

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BUDHANI, RC ;

BUNSHAH, RF ;

FLINN, PA .

APPLIED PHYSICS LETTERS, 1988, 52 (04) :284-286

[2]

Curry J., 1984, 22nd Annual Proceedings on Reliability Physics 1984 (Catalog No. 84CH1990-1), P6, DOI 10.1109/IRPS.1984.362013

[3]

Groothuis S. K., 1987, 25th Annual Proceedings: Reliability Physics 1987 (Cat. No.87CH2388-7), P1, DOI 10.1109/IRPS.1987.362147

[4] STRESS-INDUCED GRAIN-BOUNDARY FRACTURES IN AL-SI INTERCONNECTS [J].

HINODE, K ;

OWADA, N ;

NISHIDA, T ;

MUKAI, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (02) :518-522

[5]

HINODE K, 1988, 5TH P VLSI MULT INT, P429

[6]

JONES RE, 1984, 25TH ANN P REL PHYS, P9

[7]

Koyama H., 1986, 24th Annual Proceedings Reliability Physics 1986 (Cat. No.86CH2256-6), P24, DOI 10.1109/IRPS.1986.362107

[8]

Mayumi S., 1987, 25th Annual Proceedings: Reliability Physics 1987 (Cat. No.87CH2388-7), P15, DOI 10.1109/IRPS.1987.362149

[9]

OWADA N, 1985, 2ND P INT VLSI MULT, P173

[10]

Sugano Y., 1988, 26th Annual Proceedings. Reliability Physics 1988 (Cat. No.88CH2508-0), P34, DOI 10.1109/RELPHY.1988.23422

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