MOLECULAR-BEAM EPITAXIAL-GROWTH AND SURFACE-DIFFUSION

被引:94
作者
KESSLER, DA
LEVINE, H
SANDER, LM
机构
[1] UNIV CALIF SAN DIEGO,INST NONLINEAR SCI,LA JOLLA,CA 92093
[2] UNIV CALIF SAN DIEGO,DEPT PHYS,LA JOLLA,CA 92093
关键词
D O I
10.1103/PhysRevLett.69.100
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigate the statistical properties of the surface of thin films grown by molecular-beam epitaxy (MBE). We present and analyze a simple model of MBE growth which incorporates surface diffusion and deposition in a physically correct manner. The short-time behavior does not correspond to that predicted by the continuum model of Villain, Das Sarma, and others. At long times, the model is governed by Kardar-Parisi-Zhang dynamics.
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页码:100 / 103
页数:4
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