LOW-TEMPERATURE VELOCITY-FIELD CHARACTERISTIC OF N-TYPE GALLIUM ARSENIDE

被引：9

作者：

ACKET, GA

LAM, HT

HEINLE, W

机构：

[1] Philips Research Laboratories, N.V. Philips' Gloeilampenfabrieken, Eindhoven

来源：

PHYSICS LETTERS A | 1969年 / A 29卷 / 10期

关键词：

D O I：

10.1016/0375-9601(69)91114-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Theoretical and experimental results on the velocity-field characteristic of relatively pure n-type gallium arsenide at 100°K are presented. Satisfactory agreement is found between theory and experiments. The results are compared with recent data concerning material with more pronounced scattering by impurities. © 1969.

引用

页码：596 / &

共 8 条

[1]

ACKET GA, 1968, PHILIPS RES REP, V23, P317

[2]

ACKET GA, 1967, T IEEE, VED14, P505

[3]

BRASLAU N, PRIVATE COMMUNICATIO

[4] DISPLACED MAXWELLIAN CALCULATION OF TRANSPORT IN N-TYPE GAAS [J].