HALL-EFFECT IN SEMICONDUCTING POWDERS

被引:5
作者
ORTON, JW
POWELL, MJ
机构
[1] Philips Research Laboratories, Redhill, Surrey
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1978年 / 38卷 / 05期
关键词
D O I
10.1080/13642817808246398
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two aspects of the electrical conduction through powder semiconductors are studied: The effect of band-bending at the surface of the grains and the percolative nature of the current flow. Conductivity and Hall effect measurements were made on ZnO powders and on mixed powders of conducting ZnO and insulating ZnS. The effects of surface band-bending on the pure ZnO samples were interpreted by a 4 composite-sphere ’ model which indicates that, for a powder of mean grain diameter 0·6 μm, the Hall effect measurements can only be used to measure the carrier concentration in the grains for values of ND - NA> 1017. For the ZnO used here, ND – NA< 1016 cm-3. The mixed ZnO/ZnS system showed classical site percolation behaviour in conductivity, σ = σ0(x - xc)1.7; the critical volume fraction of ZnO was x0 = 0·14. The Hall effect results are less conclusive and are discussed in conjunction with a survey of appropriate percolation theories. © 1978 Taylor & Francis Group, LLC.
引用
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页码:491 / 501
页数:11
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