THE EFFECT OF PHOTOELECTROCHEMICAL ETCHING ON THE PERFORMANCE OF CDS BASED PHOTOELECTROCHEMICAL CELLS

被引:34
作者
TENNE, R
机构
来源
APPLIED PHYSICS | 1981年 / 25卷 / 01期
关键词
D O I
10.1007/BF00935385
中图分类号
O59 [应用物理学];
学科分类号
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页码:13 / 16
页数:4
相关论文
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[2]  
CAHEN D, UNPUBLISHED
[3]   PHOTOVOLTAIC PROPERTIES OF MIS-SCHOTTKY BARRIERS [J].
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[5]   IMPROVED EFFICIENCY OF CDSE PHOTOANODES BY PHOTOELECTROCHEMICAL ETCHING [J].
TENNE, R ;
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APPLIED PHYSICS LETTERS, 1980, 37 (04) :428-430
[6]  
TENNE R, UNPUBLISHED