THICK SELECTIVE EPITAXIAL-GROWTH OF SILICON AT 960-DEGREES-C USING SILANE ONLY

被引：6

作者：

AFSHARHANAII, N

BONAR, JM

EVANS, AGR

PARKER, GJ

STARBUCK, CMK

KEMHADJIAN, HA

机构：

[1] Microelectronics Group, Department of Electronics and Computer Science, The University, Southampton

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 18卷 / 03期

关键词：

SILICON EPITAXY; SILICON SELECTIVE EPITAXY; LPCVD; SILANE SELECTIVE EPITAXY; SELECTIVE EPITAXY FOR VLSI;

D O I：

10.1016/S0167-9317(05)80004-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Selective epitaxial layers of silicon have been successfully grown in a chlorine-free system. An optimum set of growth conditions has been found under which selective layers of up to 1 mum can be achieved. Excellent thickness uniformity (less than 5% standard deviation) across the wafer and from run to run has been achieved in windows as small as 1 mum, without any loading effect. In features with sidewalls aligned along the [100] direction, faceting is less pronounced as compared to features aligned along the [110] direction. The technology is promising for the fabrication of future ULSI devices, utilizing selective epitaxial growth of silicon.

引用

页码：237 / 246

页数：10

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