MOS DEVICE FABRICATION USING X-RAY-LITHOGRAPHY

被引：3

作者：

SUZUKI, K ^{[1
]}

MATSUI, J ^{[1
]}

ONO, T ^{[1
]}

SAITO, Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 11期

关键词：

D O I：

10.1149/1.2127265

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2434 / 2437

页数：4

共 11 条

[1]

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[2]

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[4] SELECTIVE ETCHING OF SI RELATIVE TO SIO2 WITHOUT UNDERCUTTING BY CBRF3 PLASMA [J].

MATSUO, S .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :768-770

[5] HIGH-RESOLUTION THICK MASK PATTERN FABRICATION FOR X-RAY-LITHOGRAPHY [J].

ONO, T ;

OZAWA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :2311-2312

[6] RADIATION EFFECTS IN MOS DEVICES CAUSED BY X-RAY AND E-BEAM LITHOGRAPHY [J].

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FULTON, R ;

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BROWN, D ;

WHITLOCK, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1658-1661

[7]

STOVER HL, 1979, SOLID STATE TECHNOL, V95

[8]

SUZUKI K, 1978, JPN J APPL PHYS, V17, P447

[9]

YAMAZAKI S, 1980, B JPN SOC PREC ENG, V14, P137

[10] X-RAY-LITHOGRAPHY [J].

YAMAZAKI, S ;

HAYASAKA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :35-40

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