GALVANOMAGNETIC EFFECTS AND BAND STRUCTURE OF ANTIMONY

被引：48

作者：

FREEDMAN, SJ

JURETSCHKE, HJ

机构：

来源：

PHYSICAL REVIEW | 1961年 / 124卷 / 05期

关键词：

D O I：

10.1103/PhysRev.124.1379

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1379 / &

共 20 条

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[4] BUSCH G, 1954, PHYS ACTA, V27, P241
[5] GALVANOMAGNETIC EFFECTS IN N-TYPE BISMUTH TELLURIDE
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GROVES, RD
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[6] DRABBLE JR, 1956, PROC PHYS SOC, VB69, P1101
[7] FREEDMAN SJ, DISSERTATION
[8] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR
HERRING, C
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[9] TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING
HERRING, C
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[J]. PHYSICAL REVIEW, 1956, 101 (03): : 944 - 961
[10] SYMMETRY OF GALVANOMAGNETIC EFFECTS IN ANTIMONY
JURETSCHKE, HJ
[J]. ACTA CRYSTALLOGRAPHICA, 1955, 8 (11): : 716 - 722